Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detector

Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.Comment: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.162

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.Comment: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth.

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.Comment: 6 pages, 5 figures, to appear in the proceedings of the 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Device

Low-temperature thin film encapsulation for MEMS with silicon nitride/chromium cap

In this work, a low-temperature fabrication process of thin film encapsulation (TFE) with silicon nitride/chromium cap is proposed for large-size (750 μm x 300 μm) packaging of microelectromechanical systems (MEMS). A FEM model was developed to evaluate the shape of TFE as a function of the residual stress and the thickness of the sealing layer, providing useful guidelines for the fabrication process. The low temperature of 200 °C, which was used in the plasma-enhanced chemical vapor deposition of the silicon nitride capping layer, allowed an organic sacrificial material to be employed for the definition of the encapsulation area. Silicon nitride/chromium (1 μm/20 nm) bilayer was demonstrated to be successful to overcome the technological limitations that affect the creation of cap holes with size of ~2 μm on high topography substrates, as in the case of MEMS. Plasma focused ion beam (PFIB) and scanning electron microscopy (SEM) techniques were used in combination to gain deeper insight into the sealing process of cap holes. Specifically, a PFIB-SEM serial section procedure was developed, resulting to be a powerful tool to directly observe the sealing profile above cap holes. Hence, the presented results greatly contribute to overcome the main technological/reliability issues of TFE, paving the way for the widespread application of the proposed encapsulation methodology to the most used MEMS devices, as radio-frequency (RF) switches, transducers, actuators, sensors and resonators

Rib waveguides for mid-infrared silicon photonics

Design rules for both single-mode and polarization-independent strained silicon-on-insulator rib waveguides at the wavelength of 3.39 mu m are presented for the first time to our knowledge. Waveguide geometries with different parameters, such as waveguide height, rib width, etch depth, top oxide cover thickness and sidewall angle, have been studied in order to investigate and define design rules that will make devices suitable for mid-IR applications. Chebyshev bivariate interpolation with a standard deviation of less than 1% has been used to represent the zero-birefringence surface. Experimental results for the upper cladding stress level have been used to determine the influence of top oxide cover thickness and different levels of upper cladding stress on waveguide characteristics. Finally, the polarization-insensitive and single-mode locus is presented for different waveguide heights. (C) 2009 Optical Society of Americ

Growth and Self-Ejection of Single Condensate Droplet on Nanostructured Microcones

In the last decade, the phenomenon of coalescence-induced droplet jumping has been studied in depth because of the advantages it brings in applications such as anti-frosting, anti-icing, condensation heat transfer, water harvesting, thermal diodes for electronics cooling and self-cleaning [1]. In this work we theoretically and experimentally show that surfaces structured with micro truncated cones covered with highly hydrophobic nanostructures exhibit a recurrent self-ejection of single condensate droplets in addition to the common coalescence-induced jumps. We analytically modelled the external forces acting both on a droplet of condensate slowly growing in conical pores (a simplification of the growth between truncated cones) and during the following rapid transient for two possible cases of self-ejection: 1) rapid swelling out of the structures and 2) detachment from a pinning site (a less hydrophobic defect or the nucleation site). Viscous and adhesion dissipations were included in the modelling. We described the shape of the growing droplet as a function of the tapering (B) and of dynamic contact angles (vadv and vrec ). For both cases, the minimum requirement for self-ejection is that the receding angle of the walls (vrec ) and any pinning site (vpinningrec ) are greater than 90°+B. In the first case, as the volume increases, the upper meniscus moves towards the apex of the cones and the lower one follows it as soon as it reaches vrec; when the droplet reaches the apex of the structures it self-ejects because the superior meniscus expands rapidly and a Laplace pressure gradient is generated between the menisci. In the second case, the superior meniscus grows towards the apex and when the lower one recedes from the pinning site, the droplet self-ejects due to the Laplace pressure gradient generated by the abrupt change in wettability, as recently reported for relatively large droplets (radius > 50 μm) in diverging grooves [2]. Describing growth and self-ejection with a system of forces requires a careful distinction between external and internal forces. The modelling with forces, unlike the energetic one [2], allowed us to describe the ejection transient dynamics and to derive the ejection velocity while maintaining the dependence on the dynamic contact angles of the superhydrophobic walls and of an eventual pinning site, fundamental quantities for the design of real surfaces. The analytical results relative to the case of the pinning site foresee that, at a fixed contact angle hysteresis of the superhydrophobic walls and vpinningrec, the ejection velocity increases with B (until the limit B = vpinningrec − 90°, beyond which there cannot be ejection); in addition, the velocity is greater as the droplet size decreases if viscous dissipations are not considered while a peak trend is observed with the dissipations included. We fabricated silicon truncated micro cones arranged in square and hexagonal patterns and covered with nanostructures. Through condensation experiments in a controlled environmental chamber we observed for the first time the self-ejection of the drops that nucleate and grow between the cones (in the case in question the droplet diameter ≈ 11 um). By fabricating cones of different sizes, we have also studied the self-ejection rate per unit area as a function of the droplet size. Furthermore, we performed preliminary condensation frosting experiments. Future investigations of this new class of jumping droplet surfaces may show important advantages in the mentioned applications

Preoperative prism adaptation test in normosensoric strabismus

In 19 patients with normosensoric esotropia, the squint angles measured with the alternate cover test were compared with those after prolonged prismatic correction of the squint angle and with those after prolonged occlusion of one eye. All patients showed an increase of the squint angle after prism adaptation. The angle was generally smaller after diagnostic occlusion of one eye than after prism adaptation. We assume that the increase in the squint angle after prism adaptation is caused by an anomalous sensorial relationship between the two eyes that was not detected with the usual psychophysical tests. Surgery tailored to the squint angle after prism adaptation seems advisable in patients with normosensoric esotropia

Right hemicolectomy with complete mesocolic excision is safe, leads to an increased lymph node yield and to increased survival: results of a systematic review and meta-analysis.

Funder: Università degli Studi di PerugiaBACKGROUND: The introduction of complete mesocolic excision (CME) for right colon cancer has raised an important discussion in relation to the extent of colic and mesenteric resection, and the impact this may have on lymph node yield. As uncertainty remains regarding the usefulness of and indications for right hemicolectomy with CME and the benefits of CME compared with a traditional approach, the purpose of this meta-analysis is to compare the two procedures in terms of safety, lymph node yield and oncological outcome. METHODS: We performed a systematic review of the literature from 2009 up to March 15th, 2020 according to the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) guidelines. Two hundred eighty-one publications were evaluated, and 17 met the inclusion criteria and were included. Primary endpoints analysed were anastomotic leak rate, blood loss, number of harvested lymph nodes, 3- and 5-year oncologic outcomes. Secondary outcomes were operating time, conversion, intraoperative complications, reoperation rate, overall and Clavien-Dindo grade 3-4 postoperative complications. RESULTS: In terms of safety, right hemicolectomy with CME is not inferior to the standard procedure when comparing rates of anastomotic leak (RR 0.82, 95% CI 0.38-1.79), blood loss (MD -32.48, 95% CI -98.54 to -33.58), overall postoperative complications (RR 0.82, 95% CI 0.67-1.00), Clavien-Dindo grade III-IV postoperative complications (RR 1.36, 95% CI 0.82-2.28) and reoperation rate (RR 0.65, 95% CI 0.26-1.75). Traditional surgery is associated with a shorter operating time (MD 16.43, 95% CI 4.27-28.60) and lower conversion from laparoscopic to open approach (RR 1.72, 95% CI 1.00-2.96). In terms of oncologic outcomes, right hemicolectomy with CME leads to a higher lymph node yield than traditional surgery (MD 7.05, 95% CI 4.06-10.04). Results of statistical analysis comparing 3-year overall survival and 5-year disease-free survival were better in the CME group, RR 0.42, 95% CI 0.27-0.66 and RR 0.36, 95% CI 0.17-0.56, respectively. CONCLUSIONS: Right hemicolectomy with CME is not inferior to traditional surgery in terms of safety and has a greater lymph node yield when compared with traditional surgery. Moreover, right-sided CME is associated with better overall and disease-free survival